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1SS319 from TOS,TOSHIBA

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1SS319

Manufacturer: TOS

Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching

Partnumber Manufacturer Quantity Availability
1SS319 TOS 3522 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching The part 1SS319 is a high-speed switching diode manufactured by Toshiba. Below are the key specifications from the TOS (Toshiba) datasheet:

1. **Type**: High-speed switching diode.
2. **Package**: SOD-323 (SC-76).
3. **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30 V.
4. **Maximum RMS Reverse Voltage (VR(RMS))**: 21 V.
5. **Maximum DC Reverse Voltage (VR)**: 30 V.
6. **Maximum Forward Current (IF)**: 100 mA.
7. **Peak Forward Surge Current (IFSM)**: 1 A (pulse width = 1 μs).
8. **Forward Voltage (VF)**: 1 V (at IF = 10 mA).
9. **Reverse Current (IR)**: 0.1 μA (at VR = 20 V).
10. **Junction Capacitance (Cj)**: 2 pF (at VR = 0 V, f = 1 MHz).
11. **Reverse Recovery Time (trr)**: 4 ns (typical).
12. **Operating Temperature Range**: -55°C to +125°C.

These specifications are based on the Toshiba datasheet for the 1SS319 diode.

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