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1SS309 from TOSHIBA

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1SS309

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications

Partnumber Manufacturer Quantity Availability
1SS309 TOSHIBA 64000 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications The 1SS309 is a high-speed switching diode manufactured by Toshiba. Below are the key specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (SC-76)
- **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30V
- **Maximum RMS Reverse Voltage (VR(RMS))**: 21V
- **Maximum DC Reverse Voltage (VR)**: 30V
- **Maximum Forward Current (IF)**: 100mA
- **Peak Forward Surge Current (IFSM)**: 1A (pulse width = 1ms)
- **Forward Voltage (VF)**: 1V (at IF = 10mA)
- **Reverse Current (IR)**: 0.1µA (at VR = 10V)
- **Junction Capacitance (Cj)**: 2pF (at VR = 0V, f = 1MHz)
- **Reverse Recovery Time (trr)**: 4ns (at IF = 10mA, IR = 1mA, RL = 50Ω)
- **Operating Temperature Range**: -55°C to +125°C
- **Storage Temperature Range**: -55°C to +150°C

These specifications are typical for the 1SS309 diode and are subject to standard manufacturing tolerances.

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