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1SS308 from TOSHIBA

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1SS308

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications

Partnumber Manufacturer Quantity Availability
1SS308 TOSHIBA 6422 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications The 1SS308 is a high-speed switching diode manufactured by Toshiba. Below are the key specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (SC-76)
- **Maximum Reverse Voltage (VR)**: 30 V
- **Maximum Forward Current (IF)**: 100 mA
- **Peak Forward Surge Current (IFSM)**: 1 A (pulse width = 1 ms)
- **Forward Voltage (VF)**: 1 V (at IF = 10 mA)
- **Reverse Current (IR)**: 0.1 µA (at VR = 10 V)
- **Junction Capacitance (Cj)**: 2 pF (at VR = 0 V, f = 1 MHz)
- **Reverse Recovery Time (trr)**: 4 ns (at IF = 10 mA, IR = 1 mA)
- **Operating Temperature Range**: -55°C to +125°C

These specifications are typical for the 1SS308 diode and are subject to standard manufacturing tolerances.

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