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1SS293 from TOSHIBA

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1SS293

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching

Partnumber Manufacturer Quantity Availability
1SS293 TOSHIBA 3000 In Stock

Description and Introduction

Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching The part 1SS293 is a high-speed switching diode manufactured by TOSHIBA. Below are the factual specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (SC-76)
- **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30 V
- **Maximum RMS Voltage (VRMS)**: 21 V
- **Maximum DC Blocking Voltage (VDC)**: 30 V
- **Maximum Forward Voltage (VF)**: 1 V at 10 mA
- **Maximum Reverse Current (IR)**: 0.1 µA at 25 V
- **Maximum Reverse Recovery Time (trr)**: 4 ns
- **Maximum Junction Capacitance (Cj)**: 2 pF at 0 V, 1 MHz
- **Operating Temperature Range**: -55°C to +125°C
- **Storage Temperature Range**: -55°C to +150°C

These specifications are based on TOSHIBA's datasheet for the 1SS293 diode.

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