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1SS198 from RENESAS

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1SS198

Manufacturer: RENESAS

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Partnumber Manufacturer Quantity Availability
1SS198 RENESAS 4900 In Stock

Description and Introduction

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching The 1SS198 is a high-speed switching diode manufactured by Renesas Electronics. Below are the key specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Package**: SOD-323 (SC-76)
- **Forward Voltage (VF)**: Typically 0.7V at 10mA
- **Reverse Voltage (VR)**: 30V
- **Reverse Current (IR)**: 0.1µA (max) at 25V
- **Forward Current (IF)**: 100mA (max)
- **Power Dissipation (PD)**: 150mW
- **Operating Temperature Range**: -55°C to +125°C
- **Switching Speed**: Ultra-fast, with a reverse recovery time (trr) of 4ns (typical)
- **Applications**: High-speed switching, rectification, and protection circuits

These specifications are based on the datasheet provided by Renesas Electronics.

Partnumber Manufacturer Quantity Availability
1SS198 TOS 7500 In Stock

Description and Introduction

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching The part 1SS198 is a diode manufactured by Toshiba. It is a high-speed switching diode with a maximum reverse voltage of 80V and a forward current of 150mA. The diode has a forward voltage of 1V at 10mA and a reverse recovery time of 4ns. It is designed for use in high-speed switching applications, such as in rectification, freewheeling, and clamping circuits. The 1SS198 is available in a small SOD-323 package, making it suitable for compact electronic designs.

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