1SS198Manufacturer: RENESAS Silicon Schottky Barrier Diode for Various Detector, High Speed Switching | |||
Partnumber | Manufacturer | Quantity | Availability |
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1SS198 | RENESAS | 4900 | In Stock |
Description and Introduction
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching The 1SS198 is a high-speed switching diode manufactured by Renesas Electronics. Below are the key specifications:
- **Type**: Silicon Epitaxial Planar Diode These specifications are based on the datasheet provided by Renesas Electronics. |
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Partnumber | Manufacturer | Quantity | Availability |
1SS198 | TOS | 7500 | In Stock |
Description and Introduction
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching The part 1SS198 is a diode manufactured by Toshiba. It is a high-speed switching diode with a maximum reverse voltage of 80V and a forward current of 150mA. The diode has a forward voltage of 1V at 10mA and a reverse recovery time of 4ns. It is designed for use in high-speed switching applications, such as in rectification, freewheeling, and clamping circuits. The 1SS198 is available in a small SOD-323 package, making it suitable for compact electronic designs.
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