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1SS176 from TOSHIBA

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1SS176

Manufacturer: TOSHIBA

SILICON EPITAXIAL PLANAR DIODE

Partnumber Manufacturer Quantity Availability
1SS176 TOSHIBA 300000 In Stock

Description and Introduction

SILICON EPITAXIAL PLANAR DIODE The part 1SS176 is a high-speed switching diode manufactured by TOSHIBA. Below are the key specifications:

- **Type**: High-speed switching diode
- **Maximum repetitive peak reverse voltage (VRRM)**: 30 V
- **Maximum average forward rectified current (IO)**: 100 mA
- **Peak forward surge current (IFSM)**: 1 A (non-repetitive)
- **Forward voltage (VF)**: 1 V (at 10 mA)
- **Reverse current (IR)**: 0.1 µA (at VR = 20 V)
- **Junction capacitance (Cj)**: 2 pF (at VR = 0 V, f = 1 MHz)
- **Reverse recovery time (trr)**: 4 ns (typical)
- **Operating temperature range**: -55°C to +125°C
- **Package**: SOD-323 (SC-76)

These specifications are based on TOSHIBA's datasheet for the 1SS176 diode.

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