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1SS119 from HIT

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1SS119

Manufacturer: HIT

Silicon Epitaxial Planar Diode for High Speed Switching

Partnumber Manufacturer Quantity Availability
1SS119 HIT 2000 In Stock

Description and Introduction

Silicon Epitaxial Planar Diode for High Speed Switching The part 1SS119 is a Schottky Barrier Diode manufactured by Hitachi. Key specifications include:

- **Forward Voltage (VF):** Typically 0.55V at 1A
- **Reverse Voltage (VR):** 40V
- **Forward Current (IF):** 1A
- **Reverse Current (IR):** 5µA at 25°C, 100µA at 125°C
- **Operating Temperature Range:** -65°C to +125°C
- **Package:** SOD-323 (Small Outline Diode)

These specifications are based on standard operating conditions and may vary slightly depending on specific application conditions.

Partnumber Manufacturer Quantity Availability
1SS119 HITACHI 9962 In Stock

Description and Introduction

Silicon Epitaxial Planar Diode for High Speed Switching The part 1SS119 is a diode manufactured by HITACHI. It is a high-speed switching diode with the following specifications:

- **Type**: Silicon Epitaxial Planar Diode
- **Maximum Repetitive Peak Reverse Voltage (VRRM)**: 30V
- **Maximum RMS Voltage (VRMS)**: 21V
- **Maximum DC Blocking Voltage (VDC)**: 30V
- **Maximum Forward Voltage (VF)**: 1V at 10mA
- **Maximum Reverse Current (IR)**: 5µA at 25V
- **Maximum Reverse Recovery Time (trr)**: 4ns
- **Maximum Junction Capacitance (Cj)**: 2pF at 0V, 1MHz
- **Operating Temperature Range**: -55°C to +125°C
- **Package**: SOD-323 (SC-76)

These specifications are typical for the 1SS119 diode and are used in high-speed switching applications.

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