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XL0840STMN/a10avaiSENSITIVE GATE 0.8A SCRS


XL0840 ,SENSITIVE GATE 0.8A SCRSFEATURESSymbol Value UnitI 0.8 AT(RMS)GV400 VDRMKI 200 μAGTDESCRIPTIONThanks to its highly sensitiv ..
XN01113 ,Composite DeviceElectrical Characteristics (Ta=25˚C)

XL0840
SENSITIVE GATE 0.8A SCRS
XL0840
SENSITIVE GATE 0.8A SCRs
ABSOLUTE RATINGS
(limiting values)
MAIN FEATURES

Thankstoits highly sensitive triggering levels, the
XL0840 deviceis suitableforall high volumes appli-
cations where the available gate currentis limited,
suchas Christmas lights control.
DESCRIPTION
XL0840
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
(Tj= 25°C, unless otherwise specified)
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
XL0840
0.7 25 50 75 100 125
IT(av)(A)
Fig. 2-2:
Average and D.C. on-state current ver-
sus ambient temperature (device mountedon FR4
with recommended pad layout).
1.E-02
1.E-01
1.E+00
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
K=[Zth(j-a)/Rth(j-a)]
Fig.3:
Relative variationof thermal impedance
junctionto ambient versus pulse duration.
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
P(W)
Fig.1:
Maximum average power dissipation ver-
sus average on-state current.
0.9 25 50 75 100 125
IT(av)(A)
Fig. 2-1:
Average and D.C. on-state current ver-
sus lead temperature.
0.01 0.10 1.00 10.00
IH [Rgk] / IH [Rgk=1k]
Ω
Fig.5:
Relative variationof holding current versus
gate-cathode resistance (typical values).
IGT, IH,IL[Tj] / IGT,IH, IL [Tj=25°C]
Fig.4:
Relative variationof gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
XL0840
0.10 1.00 10.00
dV/dt [Rgk] / dV/dt [Rgk=1k]
Ω
Fig.6:
Relative variationof dV/dt immunity versus
gate-cathode resistance (typical values).
1.00 10.00
dV/dt [Cgk] / dV/dt [Rgk=1k]
Ω
Fig.7:
Relative variationof dV/dt immunity versus
gate-cathode capacitance (typical values). 10 100 1000
ITSM(A)
Fig.8:
Surge peak on-state current versus number cycles.
0.01 0.10 1.00 10.00
ITSM(A), I t (A s)22
Fig.9:
Non repetitive surge peak on-state current
fora sinusoidal pulse with width tp<10ms, and cor-
responding valueofI2t.
10.00 23 45 6
ITM(A)
Fig. 10:
On-state characteristics (maximum val-
ues).
XL0840
PACKAGE MECHANICAL DATA

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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
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