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WS57C128FB-55D |WS57C128FB55DWSIN/a6100avaiHIGH SPEED 16K x 8 CMOS EPROM
WS57C128FB-55DMB |WS57C128FB55DMBWSIN/a5120avaiHIGH SPEED 16K x 8 CMOS EPROM
WS57C128FB-70D |WS57C128FB70DWSIN/a996avaiHIGH SPEED 16K x 8 CMOS EPROM
WS57C128FB-70DMB |WS57C128FB70DMBWSIN/a900avaiHIGH SPEED 16K x 8 CMOS EPROM


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WS57C128FB-55D-WS57C128FB-55DMB-WS57C128FB-70D-WS57C128FB-70DMB
HIGH SPEED 16K x 8 CMOS EPROM
PRODUCT SELECTION GUIDE
HIGH SPEED 16K x 8 CMOS EPROM
KEY FEATURES Very Fast Access Time • Standard EPROM Pinout

— 35 ns • DIP and Surface Mount Packaging Low Power Consumption Available EPI Processing
— Latch-up Immunity Up to 200 mA
GENERAL DESCRIPTION

The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both
J-leaded and leadless surface mount packages.
PIN CONFIGURATION

X can be VIL or VIH.
MODE SELECTION
AC READ CHARACTERISTICS Over Operating Range with VPP = VCC
DC READ CHARACTERISTICS
Over Operating Range with VPP= VCC
OPERATING RANGE
WS57C128FB
ABSOLUTE MAXIMUM RATINGS*

Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 13V
ESD Protection..................................................>2000V
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC± 0.3V. 4. Add 4 mA/MHz for A.C. power component. TTL inputs: VIL≤ 0.8V, VIH‡ 2.0V. 5. These are absolute voltages with respect to device ground pin and Add 1 mA/MHz for A.C. power component. include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
WS57C128FB
CAPACITANCE(6)
TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTES:
6. This parameter is only sampled and is not 100% tested. Typical values are for TA = 25°C and nominal supply voltages.
WS57C128FB
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
AC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ORDERING INFORMATION
WS57C128FB

The WS57C128FB is programmed using Algorithm D shown on page 5-9.
NOTE:
12. The actual part marking will not include the initials "WS."
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