Partno |
Mfg |
Dc |
Qty |
Available | Descript |
VNS14NV04-E |
ST|ST Microelectronics |
N/a |
900 |
|
|
VNS1NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (-40°C < T < 150°C, unless otherwise specified)jOFFSymbol Parameter Test ..
VNS1NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETBLOCK DIAGRAMDRAIN2OvervoltageClampINPUTGate1Control LinearCurrentOverLimiterTemperature 3SOURCEFC0 ..
VNS1NV04D ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETFEATURES - OVERTEMPERATURE AND SHORT CIRCUITPROTECTION: these are based on sensing theDuring normal ..
VNS1NV04D13TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETFEATURES - OVERTEMPERATURE AND SHORT CIRCUITPROTECTION: these are based on sensing theDuring normal ..
VNS1NV04DPTR-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETBlock diagram . . . . 5Figure 2. Configuration diagram (top view) . . . . . 5Figure 3. ..
WJA1021 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block