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VNP49N04STN/a4avai"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET


VNP49N04 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (-40°C < T < 125°C, unless otherwise specified)jOFFSymbol Parameter Test ..
VNP5N07 ,鯫MNIFET? FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Drain-source Voltage (V = 0) Internally Clamped ..
VNP7N04-E ,OMNIFET :FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitVDS Drain-source Voltage (Vin = 0) Internally Cla ..
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VNP49N04
"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET
/erT/,'
VN P49NO4FI
VNB49N04 / VNV49N04
"OM N I FET":
FU LLY AUTOPROTECTED POWER MOSFET
TYPE VCLAMP RDS(0N) ILiM
VNP49N04FI
VN B49NO4 42 V 20 mn 49 A
VNV49N04
I LINEAR CURRENT LIMITATION
I THERMAL SHUT DOWN
I SHORT CIRCUIT PROTECTION
I INTEGRATED CLAMP
I LOW CURRENT DRAWN FROM INPUT PIN
I DIAGNOSTIC FEEDBACK THROUGH INPUT
I ESD PROTECTION
I DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP49N04FI, VNB49N04, VNV49N04 are
monolithic devices designed in
STMicroelectronics VIPower MO Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
fit,'
ISOWATT220\\'\\3
'Ci), 1aiiiiisiii:,i,iis'is
TO-263 (D2PAK) Powerso-1oTM
ORDER CODES:
ISOWATT220 VNP49N04FI
PowerSO-10m VNV49NO4
TO-263 (D2PAK) VNB49NO4
MOSFETS from DC up to 50KHz applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Temperature
Overvoltage
Clamp -=s"u
I li--
7 ' Gate BJ
INPUT It 7 Control 1
Linear
r A Cyrrent
' Limiter
Status
SOURCE
January 2002
VNP49N04FI I VNB49N04 I VNV49N04
ABSOLUTE MAXIMUM RATING
ISOWATT220
Value .
Symbol Parameter Powerso-1oTM DZPAK ISOWATT220 Unit
VDS Drain-source Voltage (1hN=0V) Internally Clamped V
VIN Input Voltage 18 V
ID Drain Current Internally Limited A
IR Reverse DC Output Current -50 A
VESD Electrostatic Discharge (R=1.5KQ, C=100pF) 2000 V
Ptot Total Dissipation at Tc=25°C 125 125 40 W
T] Operating Junction Temperature Internally limited 'C
Tc Case Operating Temperature Internally limited "C
Tstg Storage Temperature -55 to 150 ''C
CONNECTION DIAGRAM (TOP VIEW)
INPUT SOURCE
INPUT SOURCE
INPUT C) N.C. :: SOURCE
INPUT SOURCE O :1 DRAIN
INPUT SOURCE I: INPUT
-C'sh-
PowerSO-1OTM D2PAK
C) 7—) SOURCE
C) C) I: DRAIN
C) fi;——> INPUT
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