VNH2SP30-E ,AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVERFeatures Figure 1. PackageType R I VDS(on) out ccmaxVNH2SP30-E 19 mΩ max30 A 41 V (per leg)■ OUTPUT ..
VNH2SP30TR-E ,AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVERBlock diagram . . . . 5Figure 2. Configuration diagram (top view) . . . . . 6Figure 3. ..
VNH3ASP30-E ,automotive fully integrated h-bridge motor driverBlock DiagramVCCOVERTEMPERATURE A O + UV V OVERTEMPERATURE BCLAMP HS CLAMP HSA BHS HSA DRIVER DRIVE ..
VNH3ASP30TR-E ,automotive fully integrated h-bridge motor driverAbsolute Maximum RatingSymbol Parameter Value UnitV Supply Voltage + 41 VCCI Maximum Output Current ..
VNH3ASP30TR-E ,automotive fully integrated h-bridge motor driverFeatures Figure 1. PackageTYPE R I VDS(on) OUT ccmax42 mΩ maxVNH3ASP30-E 30 A 41 V(per leg)■ OUTPUT ..
VNH3SP30 ,FULLY INTEGRATED H-BRIDGE MOTOR DRIVERABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Supply voltage -0.3.. 40 VCCI Maximum output cu ..
WFF10N65 , Silicon N-Channel MOSFET
WFF12N65 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF630 , Silicon N-Channel MOSFET
VNH2SP30E-VNH2SP30-E
AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
1/26September 2004
VNH2SP30-EAUTOMOTIVE FULLY INTEGRATED
H-BRIDGE MOTOR DRIVER
Rev. 1
Table 1. General Features� OUTPUT CURRENT: 30A
� 5V LOGIC LEVEL COMPATIBLE INPUTS
� UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
� OVERVOLTAGE CLAMP
� THERMAL SHUT DOWN
� CROSS-CONDUCTION PROTECTION
� LINEAR CURRENT LIMITER
� VERY LOW STAND-BY POWER
CONSUMPTION
� PWM OPERATION UP TO 20 KHz
� PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF VCC
� CURRENT SENSE OUTPUT PROPORTIONAL
TO MOTOR CURRENT
� IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTIONThe VNH2SP30-E is a full bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic High-Side drivers and two Low-Side
switches. The High-Side driver switch is designed
using STMicroelectronic’s well known and proven
proprietary VIPower™ M0 technology that allows
to efficiently integrate on the same die a true
Power MOSFET with an intelligent signal/
protection circuitry.
The Low-Side switches are vertical MOSFETs
manufactured using STMicroelectronic’s
proprietary EHD (‘STripFET™’) process.The three
dice are assembled in MultiPowerSO-30 package
on electrically isolated leadframes. This package,
specifically designed for the harsh automotive
environment offers improved thermal performance
thanks to exposed die pads. Moreover, its fully
symmetrical mechanical design allows superior
manufacturability at board level. The input signals
INA and INB can directly interface to the
microcontroller to select the motor direction and
the brake condition. The DIAGA/ENA or DIAGB/
ENB, when connected to an external pull-up
resistor, enable one leg of the bridge. They also
provide a feedback digital diagnostic signal. The
normal condition operation is explained in the truth
table on page 14. The CS pin allows to monitor the
motor current by delivering a current proportional
to its value. The PWM, up to 20KHz, lets us to
control the speed of the motor in all possible
conditions. In all cases, a low level state on the
PWM pin will turn off both the LSA and LSB
switches. When PWM rises to a high level, LSA or
LSB turn on again depending on the input pin
state.
Table 2. Order Codes
VNH2SP30-E
Figure 2. Block Diagram
Figure 3. Configuration Diagram (Top View)
3/26
VNH2SP30-E
Table 3. Pin Definitions And FunctionsNote: (*) GNDA and GNDB must be externally connected together
Table 4. Pin Functions Description
VNH2SP30-E
Table 5. Block Descriptions (see Block Diagram)
Table 6. Absolute Maximum Rating
Figure 4. Current and Voltage Conventions
5/26
VNH2SP30-E
Table 7. Thermal DataSee MultiPowerSO-30 Thermal Data section (page )
ELECTRICAL CHARACTERISTICS (VCC=9V up to 16V; -40°C
Table 8. Power
Table 9. Logic Inputs (INA, INB, ENA, ENB)
VNH2SP30-E
ELECTRICAL CHARACTERISTICS (continued)
Table 10. PWM
Table 11. Switching (VCC=13V, RLOAD=0.87Ω)
Table 12. Protection And Diagnostic
7/26
VNH2SP30-E
ELECTRICAL CHARACTERISTICS (continued)
Table 13. Current Sense (9V
Note:(*) Analog sense current drift is deviation of factor K for a given device over (-40°C to 150°C and 9Vvalue measured at Tj=25°C, VCC=13V.
WAVEFORMS AND TRUTH TABLE
Table 14. Truth Table In Normal Operating Conditions
In normal operating conditions the DIAGX/ENX pin is
considered as an input pin by the device. This pin must be
externally pulled high.
PWM pin usage: in all cases, a “0” on the PWM pin will
turn-off both LSA and LSB switches. When PWM rises
back to “1”, LSA or LSB turn on again depending on the
input pin state.
VNH2SP30-E
Figure 5. Typical Application Circuit For Dc To 20khz PWM OperationShort Circuit Protection
In case of a fault condition the DIAGX/ENX pin is
considered as an output pin by the device.
The fault conditions are:
- overtemperature on one or both high sides (for example
if a short to ground occurs as it could be the case
described in line 1 and 2 in the table below);
- short to battery condition on the output (saturation
detection on the Low-Side Power MOSFET).
Possible origins of fault conditions may be:
OUTA is shorted to ground ---> overtemperature
detection on high side A.
OUTA is shorted to VCC ---> Low-Side Power MOSFET
saturation detection.
When a fault condition is detected, the user can know
which power element is in fault by monitoring the INA,
INB, DIAGA/ENA and DIAGB/ENB pins.
In any case, when a fault is detected, the faulty leg of the
bridge is latched off. To turn-on the respective output
(OUTX) again, the input signal must rise from low to high
level.
Table 15. Truth Table In Fault Conditions (Detected On OUTA)
Fault Information Protection Action
9/26
VNH2SP30-E
Table 16. Electrical Transient Requirements
Reverse Battery Protection
Three possible solutions can be thought of:
a) a Schottky diode D connected to VCC pin
b) a N-channel MOSFET connected to the GND
pin (see Typical Application Circuit on page 8)
c) a P-channel MOSFET connected to the VCC pin
The device sustains no more than -30A in reverse
battery conditions because of the two Body diodes
of the Power MOSFETs. Additionally, in reverse
battery condition the I/Os of VNH2SP30-E will be
pulled down to the VCC line (approximately -1.5V).
Series resistor must be inserted to limit the current
sunk from the microcontroller I/Os. If IRmax is the
maximum target reverse current through μC I/Os,
series resistor is: IOs V CC– Rmax
------ --------------- ------------=
VNH2SP30-E
Figure 6. Definition Of The Delay Times Measurement
Figure 7. Definition Of The Low Side Switching Times
11/26
VNH2SP30-E
Figure 8. Definition Of The High Side Switching Times
Figure 9. Definition Of Dynamic Cross Conduction Current During A Pwm Operation
VNH2SP30-E
Figure 10. Waveforms in full bridge operation
13/26
VNH2SP30-E
Figure 11. Waveforms In Full Bridge Operation (continued)
