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VND7NV04STN/a3000avai"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
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VND7NV04-VNN7NV04
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
/erT/,'
VNN7NV04 / VNS7NV04
co VND7NV04 / VND7NV04-1
"OMNIFET ll":
FULLY AUTOPROTECTED POWER MOSFET
TYPE RDS(on) lIim Vclamp
VNN7NVO4
VNS7NVO4 60 mn 6 A 40 V
VND7NVO4
VND7NV04-1
I LINEAR CURRENT LIMITATION
I THERMAL SHUT DOWN
I SHORT CIRCUIT PROTECTION
I INTEGRATED CLAMP
I LOW CURRENT DRAWN FROM INPUT PIN
I DIAGNOSTIC FEEDBACK THROUGH INPUT
I ESD PROTECTION
I DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNN7NV04, VNS7NV04, VND7NV04
VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
SOT-223
T0252 (DPAK) T0251 (IPAK)
ORDER CODES
PACKAGE TUBE T&R
SOT-223 VNN7NVO4 VNN7NV0413TR
SO-8 VNS7NV04 VNS7NV0413TR
TO-252 (DPAK) VND7NV04 VND7NV0413TR
TO-251(IPAK) VND7NV04-1 -
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protects the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
--u". Clamp -
INPUT _
Gate l T
LI Control l : l"
Linear
Current
- Over Limiter
Temperature
SOURCE
FC01000
February 2003
VNN7NVO4 I VNS7NV04 I VND7NV04 I VND7NV04-1
ABSOLUTE MAXIMUM RATING
Value .
Symbol Parameter S OT- 2 2 3 S 0- 8 DPAKIIPAK Unit
VDS Drain-source Voltage (1hN=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 150 f2
ID Drain Current Internally Limited A
IR Reverse DC Output Current -10.5 A
VESD1 Electrostatic Discharge (R=1.5KQ, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 (R=33OQ, C=150pF) 16500 V
Ptot Total Dissipation at Tc=25°C 7 4.6 60 W
Maximum Switching Energy (L=0.7mH;
EMAX R509; vbat=13.5v; Tjstan=150°C; IL=9A) 40 40 m"
E Maximum Switching Energy (L=0.6mH; 37 m J
MAX RL=0§2; vbat=13.5v; Tjstan=150°C; IL=9A)
Tj Operating Junction Temperature Internally limited "C
Tc Case Operating Temperature Internally limited "C
Tstg Storage Temperature -55 to 150 °C
CONNECTION DIAGRAM (TOP VIEW)
SOURCE I] 1 v 8 D DRAIN
SOURCE U D DRAIN
SOURCE , D DRAIN
INPUT C 4 5 l DRAIN
SO-8 Package (*)
(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page l.
CURRENT AND VOLTAGE CONVENTIONS
DRAIN DS
IIN Rm
—:l—U INPUT
SOURCE
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