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VND10B
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
VND10BDOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATASeptember 1994
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) OUTPUT CURRENT (CONTINUOUS):
14 A @ Tc=85o C PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION The VND10B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to VCC.
BLOCK DIAGRAM 1/11
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
VND10B2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 o C unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
VND10B3/11
ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
(•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at Tc = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL(off) = (VCC -VOL)/ROL
note 3: tpovl tpol: ISO definition
Note 2 Relevant Figure Note 3 Relevant Figure
VND10B4/11
FUNCTIONAL DESCRIPTION The device has a common diagnostic output for
both channels which indicates open load in
on-state, open load in off-state, over temperature
conditions and stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 o C. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (Vdemag)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, both channel will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across
this diode are as follows: If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND). The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of Vih, Vil and
Vstat. This solution allows the use of a standard
diode.
Switching Time Waveforms
VND10B5/11
TRUTH TABLE
Figure 1: Waveforms
VND10B6/11
