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VB125SPSTMN/a16275avaiHIGH VOLTAGE IGNITION COIL DRIVER POWER IC


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VB125SP
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
September 1997 1/8 VB125SP
HIGH VOLTAGE IGNITION COIL DRIVER
POWER IC PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET LOGIC LEVEL COMPATIBLE INPUT BATTERY OPERATION SINGLE FLAG-ON COIL CURRENT TEMPERATURE COMPENSATED HIGH
VOLTAGE CLAMP
DESCRIPTION

The VB125SPisa high voltage power integrated
circuit made using SGS-THOMSON
Microelectronics Vertical Intelligent Power
Technology, with vertical current flow power
darlington and logic level compatible driving
circuit.
The VB125SP canbe directly biasedby using the
12V battery voltage, thus avoidingto usea low
voltage regulator.It has built-in protection circuits
for coil current limiting and collector voltage
clamping.Itis suitableas smart, highvoltage, high
current interfacein advanced electronic ignition
system.
TYPE VCL ICL ICC

VB125SP 370V 9A 200 mA
DRIVER
VOLTAGE
GND (Power)
INPUT
FLAG
GND (Control)
THERMAL
FLAG TAB
REFERENCE PROTECTION RSENSESVCC HVC
BLOCK DIAGRAM

PowerSO-10
TARGET DATA

(*) Pins 1...5
2/8
VB125SP
ABSOLUTE MAXIMUM RATING
THERMAL DATA
CONNECTION DIAGRAM
PIN FUNCTION
Symbol Parameter Value Unit

HVC Collector Voltage (Internally Limited) -0.3Vto VCLAMP V Collector Current (Internally Limited) 10 A
VCC Driving Stage Supply Voltage -0.2to40 V
ICC Driving Circuitry Supply Current 400 mAS Logic Circuitry Supply Ccurrent 100 mA
VIN Input Voltage -0.3to6 V
PTOT Power Dissipation TBD W
VESD ESD Voltage (HVC Pin) -4to4 KV ESD ESD Voltage (Other Pin) -2to2 KV Operating Junction Temperature -40to 150 °C
TSTG Storage Temperature Range -55to 150 °C
Rthj-case Thermal Resistance Junction- Case MAX 1.2 °C/W
Rthj-amb Thermal Resistance Junction- Ambient MAX 62.5 °C/W Name FUNCTION
1-5 GND Emitter Power Ground
6VCC Logic Supply Voltage GND Control Ground(*)S Logic Level Supply Voltage Filter Capacitor INPUT Logic Input Channel FLAG Diagnostic Output Signal
TAB HVC Primary Coil Output Driver6
GND
GND
GND
GND
GND
GND
VCC
INPUT
FLAG
HVC

(*)Pin6 must beconnectedto pins1-5 externally
3/8
VB125SP
ELECTRICAL CHARACTERISTICS
(Vbat=6to 24V; -40°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCL High Voltage Clamp IC= 6.5A; (See Note2) 340 370 400 V
VCE(sat) Saturation Voltageof the Power
Stage IC= 5A;Vin=4V (See Note3) 2 V
ICC(off) Power Off Supply Current Vin=0.4V Vbat= 14V(Notes 4-5)
Vin=0.4V Vbat =24V
ICC(on) Power On Supply Current VIn=4V Vbat <14V (Note 4-5)
Vin=4V Vbat =24V
ICL Coil Current Limit Vin=4V (See Note 6-7) 8 10 A
VinH High Level Input Voltage 4 V
VinL Low Level Input Voltage 0.8 V
VIN(hyst.) Input Hysteresis Voltage 0.4 V
IinH High Level Input Current Vin=4V 10 150 μA
IinL Low Level Input Current Vin=0.8V -100 μA
VdiagH High Level Diagnostic Output
Voltage
REXT=22K CEXT=1nF
(See Note8) 3.5 5.5 V
VdiagL Low Level Diagnostic Output
Voltage
REXT=22K CEXT=1nF
(See Note8) 0.5 V
IdiagTH Current Threshold Level Diag-
nostic Tj =25°C(See Note 7andfig.5) 4.25 4.5 4.75 A
Idiag High Level Flag Output Current IC>IDiagTH(See Note7) 0.5 mA
Idiag(leak) Leakage Currenton Flag Output Vin =LOW 10 μA Antipallel Diode Forward VoltageIC =-1A 2 V
Es/b Single Pulse Avalanche Energy 300 mJ Thermal Output Current Control IN= ON (See Note9) 150 °C
td(on) Turn-on Delay Timeof Output
Current (See Note 10) TBD μsd(off)
Turn-off Delay Timeof Output
Current (See Note 11) TBD μsd(off)
Turn-off Delay Timeof Output
Current (See Note 11) TBD μs
nVZ
HVC
PWR GND
VCE[V] [mA]
slope ∝ ∑Ri
FIGURE1:
Temperature Compensated High
Voltage Clamp Shownin Figure1
Rsens
100 200 300 400
nVZ VCL
Rii
Ri1
KVbe
6mH; unless otherwise specified; See Note1)
FIGURE2:
Electrical Characteristicof the Circuit
4/8
VB125SP
NOTE1
Parametric degradation are allowed with6V 24V.
NOTE2
In the high voltage clamping structureof this devicea temperature compensation has been implemented. The
circuit schematicis shownin fig.1. The KVbe cell takes careof the temperature compensation. The whole
electrical characteristicof the new circuitis showninfig.2.Upto VCE=nVZno current will flow into the collector (justthe
leakage currentof the power stage);for nVZ compensation circuit (typical slope 20K )as soonas the Vclis reached the dinamic resistance dropto ~4 to
protect the device against overvoltage (See Fig.3).
NOTE3
The saturation voltageofthe Power stage includesthe dropon the sensing resistor.
NOTE4
Considering the different waysof operationof the device (withor without spark, etc...) there are some short
periodsof timein which the output terminal (HVC)is pulled below groundbya negative current dueto leakage
inductances and stray capacitancesof the ignition coil.With VIPower devices,ifno corrective actionis taken, these
negative currents can cause parasitic glitchesonthe diagnostic output.Tokill this potential problem, acircuit that avoids
the possibility for the HVCtobe pulled undeground, by sending the required negative current from the batteryis
implementedin the VB125SP.For this reason there are some short periodsin whicha current exceeding 220 mA flowsthepin VD.
NOTE5
A zener protectionof 16V (typical)is placedon the supplypin (VCC)of the chipto protect the internal circuitry.
For this reason, when the battery voltage exceedes that value, the current flowing into Vcc pin canbe greater than the
maximum current specifiedat Vbat=14V (bothin poweron and poweroff condictions):it willbe limitedbyan internal
resistor.
NOTE6
The primary coil current valueIcl mustbe measured1ms after desaturationof the power stage.
NOTE7
These limits apply with regardtothe minimum battery voltage and resistive dropon the coiland cables thatpermit reach the limitationor diagnostic level.
NOTE8
No internal Pull-Down.
NOTE9
Tjmin= 150°C means that the behaviourof the device will notbe affectedfor junction temperature lower than
150 °C.For higher temperature,the thermal protection circuitwill beginits action reducingtheIcl limit according with the
power dissipation. Chip temperatureisa functionof the Rthof the whole systemin which the device willbe operating
(See Fig.4).
NOTE10
Propagation Time measured from input voltage rising edgeto 50%of output voltage falling edge.
NOTE11
As soonas the input signalis switched low the stored chargesin the baseofthe power transistor are removed
and theso called «Turn-off Delay Timeof Coil Current» begins; afterat the «Turn-off Fall Timeof Coil Current» starts
and,at the same time,the HVC rises.
tdLHis definedas the time between the negative edgeof the input pulsetothe point where the HVC reaches 100V.
tfLHis definedasthe delay between the 90% andthe 10%of the coil current. Ω
5/8
VB125SP
FIGURE3:
Vcl with loadL≅ 4mH
FIGURE4:
Output Current Waveform after Thermal Protection Activation.
6/8
VB125SP
FIGURE5:
Waveforms
FIGURE7:
Application Circuit
FIGURE6:
Flag Current Versus Temperature
INPUT
FLAG
HVC
EXT
1nF 22KS
100nF
5.0flag (A)
-50 0 50 100 Tcase(oC)
6.5A

VB125SP
VCC HVC
PWRGND
GNDEXT
FLAG
INPUT
VBAT
4.5A
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