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UPD9991F9-BA1 |UPD9991F9BA1NECN/a18336avai64 chords,up to 68 tones can be played simultaneously


UPD9991F9-BA1 ,64 chords,up to 68 tones can be played simultaneously DATA SHEET MOS INTEGRATED CIRCUIT µPD9991 RING TONE GENERATOR LSI (WITH SURROUND SOUND ..
UPG101B ,Gallium arsenide integrated circuitDATA SHEETDATA SHEETGaAs INTEGRATED CIRCUITP PP PPG100P, P PP PPG101PWIDE BAND AMPLIFIER CH ..
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UPG110B ,Gallium arsenide integrated circuitFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG110P ,2 to 8 GHz WIDE BAND AMPLIFIER CHIPFEATURES• Ultra wide band : 2 to 8 GHz• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz• Medium P ..
UPG130GR ,L-BAND SPDT SWITCHFEATURES• Maximum transmission power : 0.25 W (typ.)• Low insertion loss : 0.6 dB (typ.) at f = 2 G ..
VN2410LS ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. F, 16-Jul-0111-1TN2410L, VN2406D/L, VN2410L/LSVishay Siliconix     ..
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8 , N-Channel Enhancement-Mode Vertical DMOS FETs
VN30N , HIGH SIDE SMART POWER SOLID STATE RELAY


UPD9991F9-BA1

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