| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPD44164362F5-E60-EQ1 |
NEC|NEC |
N/a |
11 |
 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION |
UPD44165182AF5-E40-EQ2 NEC
UPD44165182AF5-E50 NEC
UPD44165182AF5-E50-EQ2 RENESAS
UPD44165182AF5-E50-EQ2 NEC
UPD44165182F5-E40-EQ1-A SAMSUNG
UPD44165182F5-E50-EQ1-A SAMSUNG
UPD44165182F5-E50-EQ2 NEC
UPD44165184AF5-E50-E02 NEC
UPD44165184AF5-E50-EQ2-A NEC
UPD44165184F5-E37-EQ NEC
UPD44165184F5-E37-EQ1 NEC
UPD44165184F5-E40-EQ1-A SAMSUNG
UPD44165184F5-E50-EQ1-A SAMSUNG
UPD44165362AF5-E40-EQ2 NEC
UPD44165362AF5-E50-EQ2 NEC
UPD44165362F5-E40-EQ1-A SAMSUNG
UPD44165362F5-E50-E01 NEC
UPD44165362F5-E50-EQ1-A SAMSUNG
UPD44165364AF5-E50-EQ2 NEC
UPD44165364F5-E40-EQ1-A SAMSUNG
UPD44165364F5-E50-EQ NEC
UPD44164362F5-E60-EQ1 , 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44165364F5-E50-EQ1 , 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD442000AGU-BB85X-9JH ,2M-bit(256K-word x 8-bit) Low Power SRAMFeatures• 262,144 words by 8 bits organization• Fast access time : 55, 70, 85, 100, 120 ns (MAX.)• ..
UPD442012AGY-BB70X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD442012A-X2M-BIT CMOS STATIC RAM128K-WORD BY 16-BITEXTENDED ..
UPD442012AGY-BB85X-MJH ,2M-bit(128K-word x 16-bit) Low Power SRAMFeatures• 131,072 words by 16 bits organization
