| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA2762UGR |
RENESAS |
N/a |
5000 |
 |
MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR |
NEC|NEC |
N/a |
10000 |
|
MOS FIELD EFFECT TRANSISTOR |
UPA2762UGR-E1 RENESAS Pb-free
UPA2770GR RENESAS
UPA2770GR NEC
UPA2762UGR , MOS FIELD EFFECT TRANSISTOR
UPA2780GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2780GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
UPA2781GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEDATA SHEETMOS FIELD EFFECT TRANSISTOR µ µ µ µ PA2781GRSWITCHINGN-CHANNEL POWER MOS FET/SCHO ..
UPA2782GR ,SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODEFEATURES• Built a Schottky Barrier Diode• Low on-state resistance6.0 ±0.314DS(on)1 = 11 mΩ TYP. (VG ..
UPA2790GR ,SWITCHING N- AND P-CHANNEL POWER MOS FETFEATURES 4 : Gate 2• Low on-state resistance 5, 6: Drain 2N-channel RDS(on)1 = 28 mΩ MAX. (VGS = ..
UPD555 ,EVACHIPNEC
NEC Microcomputers, Inc. #P0555
EVACHIP-42
DESCRIPTION The ,uPDSSS is a system evaluat ..
UPD5555 , MOS INTEGRATED CIRCUIT
UPD5702TU-E2 ,2.4 GHz Si LD MOS power amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specifi ed) PART ..
