| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UPA1872GR-9JG |
NEC|NEC |
N/a |
391 |
 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
UPA1872GR-9JG-E1 NEC ,ELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZero Gate Voltage Drain Current IDSS VDS = 20 V, VGS ..
UPA1872GR-9JG , N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1872GR-9JG-E1 ,N-channel enhancement type MOS FETFEATURES+5°3°–3°• 2.5 V drive available0.50.1±0.05+0.15• Low on-state resistance0.6–0.114RDS(on)1 = ..
UPA1874BGR-9JG-E1 ,N-channel enhancement type MOS FET
UPA1900TE ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPA1900TE-T1 ,Nch enhancement type MOS FETFEATURES0.65• Can be driven by a 2.5 V power source 0.95 0.951.9• Low on-state resistance0.9 to 1.1 ..
UPD4564323G5-A10-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A10B-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
UPD4564323G5-A70-9JH ,64M-bit Synchronous DRAM 4-bank, LVTTLDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μ PD4564323 for Rev. E64M-bit Synchronous DRAM4-bank, LVT ..
