UPA1709G-E2 ,Nch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1715 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-resistance85RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)RDS(on)2 = 11.0 mΩ TY ..
UPA1715G ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1715G-E1 ,Pch enhancement type power MOS FETFEATURES• Low on-resistance85RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A)RDS(on)2 = 11.0 mΩ TY ..
UPA1715G-E1 ,Pch enhancement type power MOS FETELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)CHARACTERISTICS SYMBOL TEST CO ..
UPA1715G-E2 ,Pch enhancement type power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTORPA1715μ μ μ μ SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USED ..
UPD444016LE-12 ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPD444016LG5-A12-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMDATA SHEETMOS INTEGRATED CIRCUITμ μ μ μPD444016L4M-BIT CMOS FAST SRAM256K-WORD BY 16-BITDescriptio ..
UPD444016LG5-A12Y-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMPin Configuration (Marking Side)/××× indicates active low signal.44-PIN PLASTIC TSOP (II) (10.16 m ..
UPD444016LG5-A8-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPD444016LG5-A8Y-7JF ,4M-bit(256K-word x 16-bit) Fast SRAMFeatures• 262,144 words by 16 bits organization• Fast access time : 8, 10, 12 ns (MAX.)• Byte data ..
UPD444016LLE-A8 ,4M-bit(256K-word x 16-bit) Fast SRAMPin Configuration (Marking Side)/××× indicates active low signal.44-pin plastic SOJ (10.16 mm (400 ..
UPA1709G-E1-UPA1709G-E2
