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UPA1700AG-E1-UPA1700AG-E2 Fast Delivery,Good Price
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UPA1700AG-E1 |UPA1700AGE1NECN/a3991avaiNch UMOSFET 8-pin SOP single 30V
UPA1700AG-E2 |UPA1700AGE2NECN/a6444avaiNch UMOSFET 8-pin SOP single 30V


UPA1700AG-E2 ,Nch UMOSFET 8-pin SOP single 30VDATA SHEETMOS FIELD EFFECT POWER TRANSISTORSμPA1700ASWITCHINGN-CHANNEL POWER MOS FETINDUSTR ..
UPA1701A ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C )CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITD ..
UPA1701AG ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• 2.5 V gate drive and low on-resistanceRDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 6 ..
UPA1701AG-E1 ,Nch UMOSFET 8-pin SOP single 20VFEATURES• 2.5 V gate drive and low on-resistanceRDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) 6 ..
UPA1701AG-E2 ,Nch UMOSFET 8-pin SOP single 20VELECTRICAL CHARACTERISTICS (TA = 25 °C )CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITD ..
UPA1703 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORSμ μ μ μPA1703SWITCHINGN-CHANNEL POWER MOS FETIN ..
UPD44321362GF-A50 ,32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAMFeatures• Low voltage core supply : VDD = 3.3 ± 0.165 V / 2.5 ± 0.125 V • Synchronous operation• Op ..
UPD44324182F5-E40-EQ2 , 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44324362F5-E40-EQ2 , 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44325092F5-E50-EQ2 , 36M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44325184F5-E50-EQ2 , 36M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44325362F5-E40-EQ2 , 36M-BIT QDRII SRAM 2-WORD BURST OPERATION


UPA1700AG-E1-UPA1700AG-E2

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