UP04213 ,Composite DeviceComposite TransistorsUP0421x SeriesSilicon NPN epitaxial planar typeUnit : mm+0.050.20(0.30) 0.10±0 ..
UP04214 ,Composite DeviceFeatures• Two elements incorporated into one package5˚123(Transistors with built-in resistor)(0.50) ..
UP04216 ,Composite DeviceFeatures• Two elements incorporated into one package5˚123(Transistors with built-in resistor)(0.50) ..
UP04313 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°Ca• Tr1Parameter Symbol Conditions Min Typ Max UnitCollect ..
UP1B-100-R , Miniature surface mount design
UP1B-220-R , Miniature surface mount design
UPD431000AGZ-A10-KJH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGZ-A10-KKH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
UPD431000AGZ-A10X-KJH ,1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
UPD431000AGZ-A12-KJH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
UPD431000AGZ-A12-KKH ,1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
UPD431000AGZ-B10KJH ,1M-bit(128K-word x 8-bit) Low power SRAM
UP04211-UP04213-UP04214-UP04216
