Partno |
Mfg |
Dc |
Qty |
Available | Descript |
UNR9111J-(TX) |
PANASONIC|Panasonic |
N/a |
3000 |
|
|
UNR9113J ,Composite DeviceTransistors with built-in ResistorUNR911xJ Series (UN911xJ Series)Silicon PNP epitaxial planar type ..
UNR9115J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR9116J ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment and12reduction of the number of ..
UNR9116J ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR9117J ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM