Partno |
Mfg |
Dc |
Qty |
Available | Descript |
UNR5216G0L |
panasonic|Panasonic |
N/a |
6000 |
|
|
UNR521E ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR521K ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UNR521T ,Composite DeviceTransistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUn ..
UNR521V ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UNR52A1G ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°C 3: CollectoraParameter Symbol Rating Unit Marking Symbol: FKCol ..
UPD42S18165LG5-A70-7JF , 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
UPD431000ACZ-70LL ,1M-bit(128K-word x 8-bit) Low power SRAM
UPD431000ACZ-85LL ,1M-bit(128K-word x 8-bit) Low power SRAM