UNH0009 ,Circuit Protector DevicesElectrical Characteristics T = 25°C ± 3°CaMarking Symbol: H0009Parameter Min Typ Max UnitRated vol ..
UNHZ201 ,Circuit Protector DevicesElectrical Characteristics T = 25°C ± 3°CaParameter Min Typ Max Unit Marking Symbol: H1Rated volta ..
UNR2111 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UNR2115 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UNR2116 ,Composite DeviceTransistors with built-in ResistorUNR211x Series (UN211x Series)Silicon PNP epitaxial planar typeUn ..
UNR2118 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD41464L10 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464L-10 ,DYNAMIC NMOS RAMNEC
NEC Electronics Inc.
pPD41464
65,536 x 4-Bit
Dynamic NMOS RAM
Description
The pPD ..
UPD41464L-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464L-12 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD41464L-80 ,DYNAMIC NMOS RAMPin Configurations
18-Pin Plastic MP
_ , 7ApPD41464
Pin Identification
Name Functlon
..
UPD4168C-15 , 8,192 x 8-BIT NMOS XRAM
UNH0009
