Partno |
Mfg |
Dc |
Qty |
Available | Descript |
UN2123-(TX) |
PANASONIC|Panasonic |
N/a |
5820 |
|
|
UN2124 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter ..
UN212X ,Composite DeviceAbsolute Maximum Ratings T = 25°CaR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter ..
UN212Y ,Composite DeviceTransistors with built-in ResistorUNR212x Series (UN212x Series)Silicon PNP epitaxial planar typeUn ..
UN2154 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN2210 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.N E C ELECTRONICS INC ELE I) " EHE75E‘5 UDBSLIHE. P17 " NECE
NEG 32
NEC Electronics Inc. CMds ..
UPD28C256CZ-25 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 250 ns.features include software data protection, soft.. Att
ware chip erase, auto erase and programming, ..
UPD29F032204ALGZ-A85BX-MJH ,32M-bit(4M-wordx8-bit/2M-wordx16-bit) FlashmemoryDATA SHEETMOS INTEGRATED CIRCUITµµµµ PD29F032204AL-X32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH ..