| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| UN211M-(TX) |
PANASONIC|Panasonic |
N/a |
6300 |
 |
|
UN211N ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UN211N ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
UN211V ,Composite DeviceFeatures• Costs can be reduced through downsizing of the equipment andreduction of the number of pa ..
UN2121 ,Composite DeviceTransistors with built-in ResistorUNR212x Series (UN212x Series)Silicon PNP epitaxial planar typeUn ..
UN2122 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
UPD2845GR ,1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEMDATA SHEETDATA SHEETCMOS DIGITAL INTEGRATED CIRCUITSPPPPPD2845GR1 V, 1.3 mA, 94MHz PLL S ..
UPD2845GR-E1 ,1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEMDATA SHEETDATA SHEETCMOS DIGITAL INTEGRATED CIRCUITSPPPPPD2845GR1 V, 1.3 mA, 94MHz PLL S ..
UPD28C256CZ-20 ,32,768 x 8-bit CMOS EEPROM. Access time(max) 200 ns.Pin Configuration
The pPD280256 is a 262,144-bit electrically erasable 28-Pin Plastic MP
and ..
