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UCC27222PWPRTI/BBN/a50avaiHigh-Efficiency Predictive Synchronous Buck Driver


UCC27222PWPR ,High-Efficiency Predictive Synchronous Buck DriverFEATURES APPLICATIONS Maximizes Efficiency by Minimizing  Non-Isolated Single or Multi-phasedBody ..
UCC27223PWP ,High-Efficiency Predictive Synchronous Buck DriverFEATURES APPLICATIONS Maximizes Efficiency by Minimizing  Multiphase Converters in Combination Wi ..
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UCC27222PWPR
High-Efficiency Predictive Synchronous Buck Driver
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SLUS486B − AUGUST 2001 − REVISED JULY 2003
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FEATURES
Maximizes Efficiency by Minimizing
Body-Diode Conduction and Reverse
Recovery Losses
Transparent Synchronous Buck Gate Drive
Operation From the Single Ended PWM Input
Signal
12-V or 5-V Input Operation 3.3-V Input Operation With Availability of
12-V Bus Bias
On-Board 6.5-V Gate Drive Regulator ±3.3-A TrueDrive Gate Drives for High
Current Delivery at MOSFET Miller
Thresholds
Automatically Adjusts for Changing
Operating Conditions
Thermally Enhanced 14-Pin PowerPAD
HTSSOP Package Minimizes Board Area and
Junction Temperature Rise
APPLICATIONS
Non-Isolated Single or Multi-phased
DC-to-DC Converters for Processor Power,
General Computer, Telecom and Datacom
Applications

DESCRIPTION
The UCC27221 and UCC27222 are high-speed
synchronous buck drivers for today’s
high-efficiency, lower-output voltage designs.
Using Predictive Gate Drive� (PGD) control
technology, these drivers reduce diode
conduction and reverse recovery losses in the
synchronous rectifier MOSFET(s). The
UCC27221 has an inverted PWM input while the
UCC27222 has a non-inverting PWM input.
Predictive Gate Drive� technology uses control
loops which are stabilized internally and are
therefore transparent to the user. These loops use
no external components, so no additional design
is needed to take advantage of the higher
efficiency of these drivers.
This closed loop feedback system detects
body-diode conduction, and adjusts deadtime
delays to minimize the conduction time interval.
This virtually eliminates body-diode conduction
while adjusting for temperature, load- dependent
delays, and for different MOSFET s. Precise gate
timing at the nanosecond level reduces the
reverse recovery time of the synchronous rectifier
MOSFET body-diode, reducing reverse recovery
losses seen in the main (high-side) MOSFET. The
lower junction temperature in the low-side
MOSFET increases product reliability. Since the
power dissipation is minimized, a higher switching
frequency can also be used, allowing for smaller
component sizes.
UCC27221 Not Recommended For New Designs
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