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U401AON/a50000avaiDual N-Channel JFET Switch
U404VishayN/a690avaiDual N-Channel JFET Switch
U406 |U406VishayN/a2484avaiDual N-Channel JFET Switch
SST404SILICONIXN/a224avaiMonolithic Low Noise


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SST404-U401-U404-U406
Monolithic Low Noise
SST/U401 Series
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST404
SST406
U401
U404
U406

�������� �������� ������������ Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 2 pA Low Noise High CMRR: 102 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed,Temp-Compensated,
Single-Ended Input Amps High-Speed Comparators Impedance Converters
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The SST/U401 series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401 featuring a 5-mV offset and
10-�V/�C drift.
The U series, hermetically sealed TO-71 package is available
with full military processing (see Military Information). The SST
series SO-8 package provides ease of manufacturing, and the
symmetrical pinout prevents improper orientation. The SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods (see
Packaging Information).
For similar high-gain products in TO-78 packaging, see the
2N5911/5912 data sheet.
TO-71

Top View
U401, U404, U406 NC G2 D2 S2
Narrow Body SOIC

Top View
SST404, SST406
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Gate-Drain, Gate-Source Voltage –40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300�C. . . . . . . . . . . . . . . . . . .
Storage Temperature : U Prefix –65 to 200�C. . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea 300 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
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