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Partno	Mfg	Dc	Qty	Available	Descript
TYN0512	ST	N/a	10000	avai	HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
TYN112	ST	N/a	1000	avai	HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
TYN412	ST	N/a	4187	avai	HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY

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TYN0512-TYN112-TYN412
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
TXN/TYN 0512 --->
TXN/TYN 1012
SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180° conduction angle)
TXN
TYN
Tc=80°C
Tc=90°C A
IT(AV) Average on-state current
(180° conduction angle,single phase circuit)
TXN
TYN
Tc=80°C
Tc=90°C
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)
tp=8.3ms 125 A
tp=10ms 120
I2tI2t value tp=10ms 72 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 100 mA diG/dt=1 A/μs
100 A/μs
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 125 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
260 °C
TO220AB
(Plastic)AG HIGH SURGE CAPABILITY. HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITY. TXNSerie:
INSULATED VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter TYN/TXN Unit
0512 112 212 412 612 812 1012
VDRM
VRRM
Repetitive peak off-state voltage= 125°C 100 200 400 600 800 1000 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN/TXN 0512 ---> TYN/TXN 1012 Family Silicon Controlled Rectifiers usesa high per-
formance glass passivated technology.
This general purpose Familyof Silicon Controlled
Rectifiersis designed for power supplies up to
400Hzon resistiveor inductive load.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junctionto ambient 60 °C/W
Rth (j-c) DC Junctionto caseforDC TXN 3.5 °C/W
TYN 2.5
Symbol Test Conditions Value UnitGT VD =12V (DC) RL =33Ω Tj=25°C MAX 15 mA
VGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 40mA
dIG/dt= 0.5A/μs
Tj=25°C TYP 2 μs IG= 1.2 IGT Tj=25°C TYP 50 mA IT= 100mA gate open Tj=25°C MAX 30 mA
VTM ITM= 24A tp= 380μs Tj=25°C MAX 1.6 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj= 125°C3
dV/dt Linear slopeupto VD=67%VDRM
gate open
Tj= 125°C MIN 200 V/μs VD=67%VDRM ITM= 24A VR= 25V
dITM/dt=30 A/μsdVD/dt= 50V/μs
Tj= 125°C TYP 70 μs (AV) =1W PGM= 10W(tp=20 μs) IFGM=4A(tp=20 μs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.3: Maximum average power dissipation versus
average on-state current (TYN).
Fig.4: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact (TYN).
Fig.1: Maximum average power dissipation versus
average on-state current (TXN).
Fig.2: Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink+
contact (TXN).
Fig.5: Average on-state current versus case
temperature (TXN).
Fig.6: Average on-state current versus case
temperature (TYN).
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.9: Non repetitive surge peak on-state current
versus numberof cycles.
Fig.10: Non repetitive surge peak on-state currentfor sinusoidal pulse with width:t≤ 10 ms, and
corresponding valueof I2t.
Fig.8: Relative variationof gate trigger current versus
junction temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7: Relative variationof thermal impedance versus
pulse duration.
Fig.11: On-state characteristics (maximum values).
TXN/TYN 0512 ---> TXN/TYN 1012
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method:by conduction (methodC)
Marking: type number
Weight:2.3g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N. JP=
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034
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forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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Australia- Brazil- France- Germany- Hong Kong- Italy- Japan- Korea- Malaysia- Malta- Morocco- The Nether-
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TXN/TYN 0512 ---> TXN/TYN 1012
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