TTA003 ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a ..
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TTA003
Power transistor for high-speed switching applications
TTA003
Bipolar Transistors Silicon PNP Epitaxial Type
TTA003TTA003TTA003TTA003
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Amplifiers Power Switching
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)
(2) High-speed switching: tstg = 300 ns (typ.)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, Taaa a = 25 = 25 = 25 = 25))))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
