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TSUS5202VISHAYN/a10000avaiInfrared emitting diodes


TSUS5202 ,Infrared emitting diodesElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Symbol M ..
TSUS5402 ,Infrared emitting diodesElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Symbol M ..
TSV321RILT ,General purpose low voltage rail to rail input/output op-ampFeatures Pin connections (top view)• Operating range V = 2.5 V to 6 V CC• Rail-to-rail input and o ..
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UC3572D ,Negative Output Flyback Pulse Width ModulatorUC1572UC2572UC3572Negative Output Flyback Pulse Width Modulator
UC3572DG4 ,Negative Output Flyback Pulse Width Modulator 8-SOIC 0 to 70BLOCK DIAGRAMUDG-94094-2SLUS275A - MARCH 1999 - REVISED AUGUST 2001UC1572UC2572UC3572ABSOLUTE
UC3572DTR ,Negative Output Flyback Pulse Width Modulatorblock diagram consists of• Contains UVLO Circuita precision reference, an error amplifier configure ..
UC3572DTRG4 ,Negative Output Flyback Pulse Width Modulatorblock diagram consists of• Contains UVLO Circuita precision reference, an error amplifier configure ..
UC3572N , Negative Output Flyback Pulse Width Modulator
UC3572N , Negative Output Flyback Pulse Width Modulator


TSUS5202
Infrared emitting diodes
TSUS520.Document Number 81055
www.vishay.com
Infrared Emitting Diode, 950 nm, GaAs
Description

TSUS520. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and
totransistors.
Features
Low cost emitter Low forward voltage High radiant power and radiant intensity Suitable for DC and high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 15° Peak wavelength λp = 950 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
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