TSML1000 ,Extented Power IR Emitting Diode in SMD PackageRev. 6, 21-May-03 1TSML1000/1020/1030/1040VISHAYVishay SemiconductorsParameter Test condition Symbo ..
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TSML1000
Extented Power IR Emitting Diode in SMD Package
TSML1000/1020/1030/1040Document Number 81033
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Extented Power IR Emitting Diode in SMD Package
DescriptionTSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radi-
ant power under pulse conditions, forward voltage
and reliability.
Features Outstanding high radiant power Low forward voltage Suitable for high pulse current operation Angle of half intensity ϕ = ± 12° Peak wavelength λp = 950 nm High reliability Matched Phototransistor series: TEMT1000 Versatile terminal configurations
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
Basic CharacteristicsTamb = 25 °C, unless otherwise specified
Tamb = 25 °C, unless otherwise specified
