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TSAL6200
GaAs/GaAlAs IR Emitting Diode in 鈭?5 mm (T-1戮) Package
TSAL6200Document Number 81010
www.vishay.com
GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm (T-1¾) Package
DescriptionTSAL6200 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve more than 100 % radi-
ant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features Extra high radiant power and radiant intensity High reliability Low forward voltage Suitable for high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 17° Peak wavelength λp = 940 nm Good spectral matching to Si photodetectors
Absolute Maximum Ratingsamb = 25 °C, unless otherwise specified
Basic CharacteristicsTamb = 25 °C, unless otherwise specified
