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TPS703TOSHIBAN/a10000avaiPHOTO DIODE SILICON PIN


TPS703 ,PHOTO DIODE SILICON PINTOSHIBA TPS703,TPS704SILICON PIN PHOTO DIODE FOR REMOTE CONTROL Unit in mmVARIOUS KINDS OF REMOTE C ..
TPS703(F) ,Photodiodeelectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max.UnitTPS7 ..
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TPS703
PHOTO DIODE SILICON PIN
TOSHIBA TPS703,TPS704
TOSHIBA PHOTO DIODE SILICON PIN
TPS703, TPS704
SILICON PIN PHOTO DIODE FOR REMOTE CONTROL Unit in mm
VARIOUS KINDS OF REMOTE CONTROL SYSTEMS
SMOKE SENSOR t7-:-il'-0-2-,
OPTICAL COMMUNICATION - _.._ N. -r
zemegi“ Jr' (i,',',
o Detector for visible, fluorescent, and other disturbance light. I "V _',.':)."'-."
TPS703 .' 2i>700nm (OS) I ll
TPS704 : 2>800nm 2-0-2) _ N
o High sensitivity TPS703 : ISC=1.5PA(Typ.) 2-CR).5t0.! {3? ll
TPS704 : 1sc=0.9pA(Typ.) ' - . ' -
0 High speed response :tr, tf=100ns (Typ.) 1 (5O8) 2
0 Wide half value angle :6 s-l-- i65°(Typ.) EILEEE/CHEJG ' -C";
o TLN105B, TLN115A, etc. are available as high radiant power _.§
infrared LEDs.
CATHODE INDEX
(C MARK)
MAXIMUM RATINGS (Ta=25°C) ( ) : REFERENCE VALUE
CHARACTERISTIC SYMBOL RATING UNIT JEDEC -
Reverse Voltage VR 20 V EIAJ -
Power Dissipation PD 150 mW TOSHIBA 0-7B1
Power Dissipation TPS703 o -2.36 Weight : O.31g(Typ.)
AP / C o
Derating(Ta>25°C) TPS704 D -4.3 mW/ C
Operating Temperature TPS703 -30--80 o PIN CONNECTION
R Topr 30~60 C
ange TPS704 - 1 o-M-o 2
Storage Temperature TPS703 T -40--90 "C
Range TPS704 stg -40--60 1. ANODE
Soldering Temperature . Time Tsol 260°C-3s - 2. CATHODE
PRODUCT INDICATION
MONTHLY PRODUCTION LOT
I--Ii--I
I II I
Ill' PRODUCTION MONTH(JAN.-DEC. ARE INDICATED BY ALPHABETES OF A-L)
PRODUCTION YEAR (LAST DIGIT OF A.D. IS INDICATED)
MODEL NAME
TPS703 :703
TPS704 2704
STAMP COLOR : SILVER
|"l f1
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1997-12-10 1/4
TOSHIBA TPS703,TPS704
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
. . TPS703 0.9 1.5 -
Short Cir uit Current I E=0.1mW/ cm2 (Note) A
c SC TPS704 0.5 0.9 - p
Dark Current ID VR=10V, E=0 - 1 30 nA
Open Circuit Voltage V013 E=0.1mW/ cm2(Note) I TPS703 150 250 - mV
Capacitance CT VR=3V, f=1MHz - 20 - pF
. . . TPS703 - 960 -
P ak S ns t t Wa 1 n h l - nm
e e 1 1V1 y ve e gt P TPS704 - 1000 -
. . . Rise Time tr - 100 -
Switchin Time V =10V, R =1kQ ns
g Fall Time tf R L - 100 -
Half Value Angle d , - 1'65 - o
Note : Color temperature=2870°K, Standard Tungsten Lamp.
PRECAUTION
Please be careful of the followings.
1. Soldering shall be performed at a portion of lead above 2.3mm from the body of the device.
2. If the lead is formed, the lead should be formed at a distance of 2.3mm from the body of the
device.
Soldering shall be performed after lead forming.
1997-12-10 2/4
TOSHIBA TPS703,TPS704
ID - VR (TYP.) 3 ID - Ta (TYP.)
V =10V
Ta=25°C R
A A The broken line only shows
E E 102 03 characteristic.
z a 101
ttt n: 100
. 0 4 8 12 16 20 -20 0 20 40 60 80 100
REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (°C)
IL - VR (TYP.) RELATIVE IL - Ta (TYP.)
IA The broken line o.nly. shows
TPS703 TPS703 characteristic. VR=10V
2 a 1.2
; Ta=25°C ii
E E=0.1mW/cm2 '..5
i'i, TPS704 E
E a 0.6
0 5 10 15 20 25 -40 -20 0 20 40 60 80
REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta CC)
ISO - E (TYP.) PD - Ta
g Ta=25''C 5
a TPS703 'i:
g N TPS703
a TPS704 ill
H © TPS704
0.1 0.3 1 3 10 30 i:) 0 20 40 60 80 100
RADIANT INCIDENCE E (mW/crn2) AMBIENT TEMPERATURE Ta (°C)
1997-12-10 3/4
TOSHIBA TPS703,TPS704
DIRECTIONAL SENSITIVITY CHARACTERISTIC
(TYP.)(Ta=25T) 100 CT - VR (TYP.)
RADIATION ANGLE
CT (W)
CAPACITANCE BETWEEN TERMINALS
0.1 0.3 1 3 10 30
REVERSE VOLTAGE VR (V)
SPECTRAL RESPONSE (TYP.)
TPS703 -
TPS704
Ta = 25°C
RELATIVE SENSITIVITY
600 700 800 900 1000 1100 1200
WAVELANGTH l (nm)
1997-12-10 4/4
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