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TPS610
PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TOSHIBA TPS610
TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TPS61l0
FOR PHOTO SENSOR
PHOTOELECTRIC COUNTER 'et-ar/zzz/i-ir] 23:,
VARIOUS KINDS OF READERS Jf5ce0.2
POSITION DETECTION E :0: "y-,
l? 3 i?
0 /5rnrn epoxy resin package - F
(1.2 (1.7) M
0 High sensitivity HL=250PA(TYP.) 0.5re0.1 ().5ce0.1 E}
0 Half value angle 28%: i8°(TYP.) 2:):
o The TLN110 in the same size and TLN205 in the similar (2)
external size are available as infrared LEDs. (iii),,,
.y.c. (INCLUDE RESIN Z'
MAXIMUM RATINGS (Ta = 25°C) BUILD-UP) o
( ): REFERENCE VALUE
CHARACTERISTIC SYMBOL RATING UNIT
JEDEC -
Collector-Emitter Voltage VCEO 30 V EI A J -
Emitter-Collector Voltage VECO 5 V T OSHIB A 0-5C1
Collector Current 10 50 mA W . h 0 3 TYP
Collector Power Dissipation PC 150 mW mg t . . g( .)
Collector Power Dissipation 0 0 PIN CONNECTION
Derating(Ta>25°C) APC/ C -2 mW/ C 2
Operating Temperature Range Topr -20-75 "C k l. EMITTER
Storage Temperature Range Tstg -30--100 T 1 2. COLLECTOR
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dark Current ID (ICEO) VCE = 24V, E = 0 - 0.005 0.1 pA
. VCE=3V, E=0.1mW/cm2
Light Current IL (Note) 100 250 - #A
Collector-Emitter Saturation IC = 50/1A, E = 0.1mW/ crn2
Voltage VCE (sat) (Note) - 0.25 0.4 V
. . . Rise Time tr Vcc=5V, IC =2mA - 6 -
Switching Time Fall Time tf RL-- 1000 - 6 - ps
Peak Sensitivity Wavelength AP - - 800 - nm
Half Value Angle 6 -h- - - i8 - o
(Note) Color temperature = 2870°K, Standard Tungsten Lamp
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
TOSHIBA TPS610
PRECAUTION
Please be careful of the followings.
1. Soldering shall be performed at the top portion from the lead stopper.
2. Soldering temperature .' 260°C MAX. Soldering time : 5s MAX.
3. When the lead is formed, the lead shall be formed at the top portion of the stopper without
leaving forming stress to the body of the device. Soldering shall be performed after lead forming.
961001 EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-09-08 2/4
TOSHIBA
TPS610
ALLOWABLE COLLECTOR POWER
DISSIPATION PC (mW)
LIGHT CURRENT IL (mA)
INPUT V
' \3 CC
TLNllO
PC - Ta
20 40 60 80 100
AMBIENT TEMPERATURE Ta (°C)
IL - E (TYP.)
VCE = 3V
Ta = 25°C
TEMPERATURE
= 2870°K
0.1 0.3 1 3 10 3O
RADIANT INCIDENCE E (mW / cm2)
INPUT PULSE
- ------- 90%
OUTPUT PULSE
0 -- ------ -- - 10%
_ tr - : tf
ID - Ta (TYP.)
DARK CURRENT ID (yA)
RELATIVE SENSITIVETY (%)
0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
SPECTRAL RESPONSE (TYP.)
Ta = 25°C
400 600 800 1000 1200
WAVELENGTH l (nm)
1997-09-08 3/4
TOSHIBA
TPS610
DIRECTIONAL SENSITIvITY CHARACTERISTIC
(TYP.)
(Ta=25°C)
RADIATION ANGLE
20'' 10° 0 IO'' 20°
30° - 30°
40° 40°
50'' --- 50°
60° 60''
70° 70°
80° 80"
90° 90°
1.0 0.8 0.6 0.4 0.2 0
RELATIVE SENSITIVITY
SWITCHING CHARACTERISTICS
(TYP.)
T =25°c
a OUTPUT
V PULSE
INPUT CC INPUT _ 90%
fet 1 "
TLN110 0V PULSE L 10%
(GaAs LED) OUTPUT td ~-
R RL --- -
's, tr(RL--10KQ) -
100_ : -
a" R =10kQ
5 50 tf( L )
Ed 30 NN . .
E Nit, "css, t,(RL=1kQ)
B 'N N, "Sm
© "il? .4- =4le
E 10 ''sQ 's P
, _ _ tf(RL=1kQ)
E 5:td(RL=10kO,) , _. "
- " \ _ "
" 3 - td (RL--100n, ble'? " "sto,
_ tf(RL= 1000) Jr" “"'“
tr(RL=100.Q) 's,
1 l l 1 1 [III I l
0.02 0.1 0.3 1 3 10
COLLECTOR CURRENT 10 (mA)
RELATIVE OUTPUT (dB)
10 (mA)
COLLECTOR CURRENT
FREQUENCY CHARACTERISTICS
VCC = 5V
Ta = 25°C
LIGHT SOURCE = TLNl 10
(GaAs LED)
3 10 30 100 300 1000
FREQUENCY f (kHz)
COUPLING CHARACTERISTICS WITH
TLN110 IE = 50mW/sr
Ta=25°C
TPS610 USING SAMPLE
1 : IL=150pzA atVCE=3V
E=0.lmW/cm2
K I = 3V
0.3 a C
TLN110 (st TPS611
1 3 5 10 30 50 100
DISTANCE d (mm)
1997-09-08 4/4
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