TPS601A ,PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANARTPS601ATP§601APHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mmPHOTOELECTRIC COUNTERPOSITION DETECTIONVA ..
TPS60200DGS ,Regulated 3.3-V Low Ripple Charge Pump With Low Battery IndicatorFeatures 2 Applications1• Regulated 3.3-V Output Voltage With up to • Two Battery Cells to 3.3-V Co ..
TPS60201DGS ,Regulated 3.3-V Low Ripple Charge Pump With Power Good IndicatorFeatures 2 Applications1• Regulated 3.3-V Output Voltage With up to • Two Battery Cells to 3.3-V Co ..
TPS60203DGSR ,Regulated 3.3-V Low Ripple Charge Pump With Power Good IndicatorFeatures 2 Applications1• Regulated 3.3-V Output Voltage With up to • Two Battery Cells to 3.3-V Co ..
TPS60204DGS ,Regulated 3.3-V Low Ripple Charge Pump with Low Battery Indicatorfeatures10-pin MSOP With Only Four External Regulated 3.3-V Output Voltage With up toCapacitors Re ..
TPS60204DGSR ,Regulated 3.3-V Low Ripple Charge Pump with Low Battery IndicatorFEATURESAPACKAGE (mA) (V)TPS60204DGS AFB 100 3.3 Low-battery detector−4 −40 0° °C to 85 C to 85° °C ..
TSM102AIN ,DUAL OPERATIONAL AMPLIFIERTSM102/A DUAL OPERATIONAL AMPLIFIER - DUAL COMPARATORAND ADJUSTABLE VOLTAGE REFERENCEOPERATIONAL A ..
TSM102AIPW ,Dual Opamp, Dual Comparator with Voltage Reference 16-TSSOP -40 to 85FEATURES APPLICATIONS• Switch-Mode Power Supplies• OPERATIONAL AMPLIFIERS• Battery Chargers– Low Su ..
TSM102I ,DUAL OPERATIONAL AMPLIFIERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCC Supply Voltage 36 VV Differential Input Volt ..
TSM102ID ,DUAL OP-AMP DUAL COMPARATOR & ADJUSTABLE VOLTAGE REFERENCEELECTRICAL CHARACTERISTICS+ -V = 5V, V = 0V, T = 25°C (unless otherwise specified) CCCC ambSym ..
TSM102IDT ,DUAL OP-AMP DUAL COMPARATOR & ADJUSTABLE VOLTAGE REFERENCETSM102/AVOLTAGE AND CURRENT CONTROLLER OPERATIONAL AMPLIFIERS■ LOW SUPPLY CURRENT : 200μA/am ..
TSM102IN ,DUAL OP-AMP DUAL COMPARATOR & ADJUSTABLE VOLTAGE REFERENCETSM102/AVOLTAGE AND CURRENT CONTROLLER OPERATIONAL AMPLIFIERS■ LOW SUPPLY CURRENT : 200μA/am ..
TPS601A
PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR
TOSHIBA TPS601A
TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR
TPS601IA
PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm
PHOTOELECTRIC COUNTER
pf5.8MAX
POSITION DETECTION sr/ri/ls
VARIOUS KINDS OF READERS LO
0 T0-18 metal package 5'7 me'
0 High sensitivity. 2-pf0.45k0.1 'ii
0 Sharp directivity. Incident light can be effectively used.
b-- i 10° (TYP.)
ct The same size TPS604 with the base pin is available.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT JEDEC -
Collector-Emir Voltage VCEO 40 V J
Emitter-Collector Voltage VECO 5 V TOSHIBA 0-5A1
Collector Current 10 50 mA Weight . 0.39g (TYP.)
Collector Power Dissipation PC 150 mW PIN CONNECTION
Collector Power Dissipation
o - o 1. EMIPIER
Derating(Ta>25°C) APC/ C 1.2 mW/ C C: 1 2 COLLECTOR
Operating Temperature Range Topr -40--125 "C
Storage Temperature Range Tstg - 55 -- 150 T
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
, implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-09-08 1/5
TOSHIBA TPS601A
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dark Current ID (ICEO) VCE =30V, E=0 - 0.01 0.2 PA
TPS601A 100 - -
VCE =3V
TP 1A-A 1 -
Light Current IL E=0.1mW/cm2 S60 00 300 pA
(Note) TPS601A-B 200 - 600
TPS601A-C 400 - 1200
Collector-Emitter Saturation IC =30/1A E =0.1mW/ cm2
V ' - 0.25 0.4 V
Voltage CE (sat) (Note)
S it hi Ti Rise Time tr Vcc=5V, Ic=10mA - 2 - ,us
W1 c m lme -
g Fall Time tf RL - 100n - 2 -
Peak Sensitivity Wavelength AP - 800 - nm
Half Value Angle " - i10 - o
Note :
PRECAUTION
Please be careful of the followings.
1. Soldering temperature : 260°C MAX.
Soldering time :
5s MAX.
Color temperature=2870°K, Standard Tungsten Lamp.
(Soldering portion of lead .' above 1.5mm from the body of the device.)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Solderign shall be performed after lead forming.
PRODUCT INDICATION
MODEL NAME
r" 1 r-d,
7:360”: 'LJLJ
STAMP COLOR :
(JAN-DEC ARE INDICATED BY ALPHABETES OF A-L)
MONTHLY PRODUCTION LOT
L'-?),?!,-",?,?,),",?,?, MONTH
PRODUCTION YEAR(LAST DIGIT OF A. D. IS INDICATED)
1997-09-08 2/5
TOSHIBA
ALLOWABLE COLLECTOR POWER
DISSIPA'I‘ION PC (mW)
LIGHT CURRENT IL (mA)
SWITCHING TIME TEST CIRCUIT
INPUT V
' \3 CC
TLNlOlA
PC - Ta
0 40 60 120 160 200
AMBIENT TEMPERATURE Ta (°C)
IL - E (TYP.)
VCE =3V
Ta=25°C
TEMPERATURE = 2870°K
.0.1 0.3 1 3 10 30
RADIANT INCIDENCE E (mW/crn2)
INPUT PULSE
OUTPUT PULSE
DARK CURRENT ID (yA)
RELATIVE SENSITIVETY (%)
TPS601A
- ------_ 90%
0 -- ------ -- - 10%
"-tr A < tf
ID - Ta (TYP.)
0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
SPECTRAL RESPONCE (TYP.)
Ta = 25°C
400 600 800 1000 1200
WAVELENGTH l (nm)
1997-09-08 3/5
TOSHIBA TPS601A
DIRECTIONAL SENSITIVITY CHARACTERISTIC FREQUENCY CHARACTERISTICS
(TYP.) .
(Ta=25°C) VCC=5V
RADIATION ANGLE Ta=25''C
LIGHT SOURCE=TLN108
A (GaAs LED)
1.0 0.8 0.6 0.4 0.2 o
RELATIVE SENSITIVETY 1 3 10 30 100 300 1000
FREQUENCY f (kHz)
COUPLING CHARACTERISTICS WITH
Vcc=5V oo VCC
RL=1kQ
T --25''C R RL
SWITCHING CHARACTERISTICS a--
(TYP) LIGHT SOURCE=TLN101A 2D)
C (GaAs LED) - f d
Ta=25° 20
"PRIs, Cl A 500mA(PULSE)
INPUT _ VCC OUTPUT -, 90% E 10 PULSE WIDTH=100ys
TLN108 fe'. 10V PULSE- c10% V REPRETITIVE FREQUENCY=100Hz
(GaAs LED) OUTPUT ta -- S? 5
R m. --- -1- E 3
'i2 tr tf Z
5 200 tl
"s t,(RL=10kQ) " ttt
m 's. I - - D
x 100 $314.41; I I 0 1
E 50 mRL=10km g 0.5
- Ps \ Ex) A C
= 30 NN . __] 0.3 80m (D )
g "Rt 'sit, tr(RL=le) ti 40mA(DC)
t "ct: 'tite, gmmm © 20mA(DC)
10 "ct ,4 0.1 10mA(DC)
_ % tf(RL=1kQ) IF=5mA(DC)
5 [td (RL= 10km _ _ 0.05
- " _ ' _
3",i,eyyefybS) /‘ "stu, 0.03
_ q
fr" C.?r....r"-
MRL=1oom G,
1 11111111 1 I 0.01
0.02 0.1 0.3 1 3 10 1 3 10 30 100 300 1000
COLLECTOR CURRENT 10 (mA) COUPLING DISTANCE d (mm)
1997-09-08 4/5
TOSHIBA
TPS601A
RELATIVE IL - Ta (TYP.)
E E=0.1mW/cm2
a VCE=3V
-40 -20 0 2O 40 60 80 100
AMBIENT TEMPERATURE Ta CC)
COUPLING CHARACTERISTICS WITH
TLN108
Ta=25°C
a" 30 IE=42mW/sr
t TPS601A _.. IL=226PA
5: at VCE=3V
ti 0.5 E=0.1mW/cm2
=CD d 7
0.5 1 3 5 10 30 50 100 200
DISTANCE d (mm)
COLLECTOR CURRENT 10 (mA)
COUPLING CHARACTERISTICS WITH
TLN201
Ta = 25''C
IE = 25.5mW / st
TPS601A USING SAMPLE
1 IL=226/1A
at VCE=3V
0.5 E=0.1mW/em2
0.3 =CD <13:
l 3 5 10 30 50 l 00
DISTANCE d (mm)
300 500 1000
1997-09-08 5/5
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