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TPM1919-60
MICROWAVE POWER GAAS FET
TOSHIBA
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA TPM1919-60
MICROWAVE POWER GaAs FET
aeur" a: Gi " J
FEATURES I
El HIGH POWER El PARTIALLY MATCHED TYPE
P1dB = 48.0 dBm at 1.9 GHz
El HIGH GAIN _ U HERMETICALLY SEALED PACKAGE
G1d3 = 13 dB at 1. 9GHz
RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point PWB dBm 47.0 48.0 -
Power Gain at 1dB VDS = 12V
Compression Point Gus f = 1. 9 GHz dB 12. 0 13. 0 -
Drain Current bs los (RF Off) L-. 6A A - 12.0 15.0
Power Added Efficiency yadd % - . 40 -
ChanneI-Temperature Rise ATch NOTE1 "C - - 100
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Transconductance gm IYDDSS :13}; A S - 20.0 -
Pinch-off Voltage Vtssoti Eggs ==300/mA V - 1 o -1.8 -3 0
Saturated Drain Current bas $2: : 3:; A - 38 46
te-i?"" Breakdown VGSO las = -10mA V --5 . - -
Thermal Resistance Rm (c-c) Channel to Case "C/IN - 0.6 O.8,
NOTE1 : ATch = (VDS M IDS + Pin - Po) x Rth (C-C)
* RECOMMENDED GATE RESISTANCE (RE) 3 Rg=30 Q WAX. )
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
E k The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with the design of equipment incorporating this product.
'iitsse,rrerr--sic, n-o: a " a -tTCDE3FllE3A CORPORATION Co '-, 'Ta- u. m-I-ug
Jan.1999
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage V03 V 15
Gate-Source Voltage VGS V --5
Drain Current IDs A 46
Total Power Dissipation (Tc = 25°C) PT W 185
Channel Temperature Tch "C 175
Storage Temperature T Tstg "C -65--175
PACKAGE OUTLINE (2-16G6A)
10120.15 Unit in mm
4-C1.0 C) E OD Gate
"s,. " - " N io' © Source
. tr.-..; © Drain
g - E} g
'e",:!. © l 32
3. _ T-
F J t .
" - " T.
Ci),., r 3
24.5 MAX. 7
"ii'i'
I 16.4 MAX. l -.
3.8 MAX.
HANDLING PRECAUTIONS FOR PAC.KAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260''C.
RF PERFORMANCES.
TPM1919-60 MN "lEeMNEg.l - - -
Po (dBm)
Po (dBm)
Output Power vs. Frequency
VDs=12V
IDsilZA
Pin=35dBm
1.7 1.8 1.9 2.0 2.1
Frequency (GHz)
Output Power vs. Input Power
f=1.9GHz
VDs=12V
IpsilZA
,,,,,/''''
// radd
",,,,w'''' "
w....,-"'''
25 27 29 31 33 35
Pin (dBm)
nadd (%)
EMSMa=" TPM1919-60 "_=Nm-leB=="--I=Nm=m' -w==-"
POWER DISSIPATION VS. CASE TEMPERATURE
PT (W)
O 40 80 _ 120 160 200
Tc ('C)
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