TPCP8302 ,Power MOSFET (P-ch dual)Thermal Characteristics Characteristic Symbol MaxUnitSingle-device operation R 84.5th (ch-a) (1)The ..
TPCP8401 ,MOSFET TPC SeriesTPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOS / N Channe ..
TPCP8402 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance : P Channel R = 60 mΩ (typ.) DS (ON) N Channe ..
TPCP8505 ,Power transistor for high-speed switching applications
TPCP8510 ,Power transistor for high-speed switching applications
TPCP8601 ,Power transistor for high-speed switching applications
TS2431ACX RF , Adjustable Precision Shunt Regulator
TS2431AILT ,PROGRAMMABLE SHUNT REFERENCETS2431PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE2.5 to 24V■ SEVERAL PRE ..
TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TS250-130F-RA-2 , PolySwitch®PTC Devices Overcurrent Protection Device
TPCP8302
Power MOSFET (P-ch dual)
TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCP8302 Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.4 to −1.0 V (VDS = −6 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration Marking (Note 6) Unit: mm
Weight: 0.017 g (typ.)
8 7 6 5 7 6 5
