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TPCP8102TOSHIBAN/a12738avaiPower MOSFET (P-ch single)


TPCP8102 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) 0.17±0.02-0.11+0.131.12Characteristic Symbol Rating Unit -0.12 ..
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TS2431BILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
TS2431ILT ,PROGRAMMABLE SHUNT REFERENCEELECTRICAL CHARACTERISTICST = 25°C (unless otherwise specified) AMBIENTSymbol Parameter Test Co ..
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TPCP8102
Power MOSFET (P-ch single)
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS Ⅳ)
TPCP8102

Notebook PC Applications
Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement model: Vth = -0.45 to -1.2 V
(VDS = -10 V, ID = -200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration Marking (Note 5)

Weight: 0.017 g (typ.) 7 6 5
8 7 6 5
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