TPCF8304 ,MOSFET TPC SeriesThermal Characteristics Characteristic Symbol MaxUnitSingle-device operation R 92.6th (ch-a) (1)The ..
TPCF8402 ,MOSFET TPC SeriesApplications • Low drain-source ON resistance : P Channel R = 60 mΩ (typ.) DS (ON) N Channel ..
TPCF8B01 ,MOSFET TPC SeriesThermal Characteristics for MOSFET and SBD Characteristics Symbol Max Unit Single-device operation ..
TPCL4203 ,Power MOSFET (N-ch dual)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (t = 10 ..
TPCM8001-H ,MOSFET TPC SeriesApplications • Small footprint due to small and thin package • High speed switching 0.5541• Small ..
TPCP8001-H ,MOSFET TPC SeriesThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 7 ..
TS2007 ,3W filter free class D audio power amplifier with fixed gainAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2012EIJT ,Filter-free stereo 2 x 2.8 W class D audio power amplifierAbsolute maximum ratingsSymbol Parameter Value Unit(1)V Supply voltage 6VCC(2)V Input voltage GND t ..
TS2019LF , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2019M , 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULES
TS2023B , 10 BASE-T ISOLATION TRANSFORMER
TS20P06G , Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers
TPCF8304
MOSFET TPC Series
TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C) For Notes 1 to 6, see the next page.
Caution: This transistor is an electrostatic-sensitive device. Handle with
care.
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration 1 2 3 4 7 6 5
