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TPCF8101
Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications Portable Equipment Applications
TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8101 Notebook PC Applications
Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −12 V) Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 5) 8 6
1 2 3 5
