TPCA8128 ,Power MOSFET (P-ch single)Absolute Maximum Ratings (Ta = 25°C) S 41 Characteristics Symbol Rating Unit Drain-source voltage V ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2Characteristic Symbol Rating Unit Drain-source voltage ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8A02-H ,Power MOSFET (N-ch single VDSS≤30V)Applications 0.4±0.11.270.5±0.1 0.05 M A 8 5• Built-in a schottky barrier diode Low forward voltag ..
TPCA8A04-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8A05-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 1 4 Characteristic Symbol Rating Unit 4.25 ± 0.2Drain-source v ..
TS1851I ,1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit1)V7VCC Supply voltage2)V±1Vid Differential Inpu ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSfeatures both Input and Output Rail toRail (1.71 @ V = 1.8V, R = 2kΩ), 120μA con-CC L8 N.C.N.C. 1su ..
TS1851ID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851IDT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSTS1851TS1852TS18541.8V INPUT/OUTPUT RAIL TO RAILLOW POWER OPERATIONAL AMPLIFIERS ■ OPERATING AT V ..
TS1851ILT ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSapplications, this Op-Amp is veryV 5 N.C.4DDwell-suited for any kind of battery-supplied andportabl ..
TS1852AID ,1.8V, INPUT/OUTPUT RAIL TO RAIL LOW POWER OP-AMPSapplications.The TS1851 is housed in the space-saving 5 pinSOT23-5 package which simplifies the boa ..
TPCA8128
Power MOSFET (P-ch single)
TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅵ)
TPCA8128 Lithium Ion Battery Applications
Power Management Switch Applications Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 3.7 mΩ (typ.) Low leakage current : IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode
: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 m A )
Absolute Maximum Ratings (Ta = 25°C) Note: For (Note 1), (Note 2), (Note 3), refer to the next page. Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
Weight: 0.076 g (typ.)
Circuit Configuration 8 6
1 2 3 5
