TPCA8059-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (Tc = 25) ..
TPCA8060-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 ° ..
TPCA8060-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Ta = 25°C) 4.25 ± 0.2Characteristic Symbol Rating Unit Drain-source volta ..
TPCA8062-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise speci ..
TPCA8063-H ,Power MOSFET (N-ch single VDSS≤30V)Absolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specifi ..
TPCA8064-H ,Power MOSFET (N-ch single VDSS≤30V)Thermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-case thermal resistance (T = 25 ) ..
TS12A4514D ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85Electrical Characteristics for 5-V SupplyV = 4.5 V to 5.5 V, V = 2.4 V, V = 0.8 V, T = –40°C to 85° ..
TS12A4514DBVR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 5-SOT-23 -40 to 85FEATURES• 2-V to 12-V Single-Supply Operation • Specified Low ON-Leakage Currents:• Specified ON-St ..
TS12A4514DRG4 ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TS12A4515DBVR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 5-SOT-23 -40 to 85Electrical Characteristics for 5-V SupplyV = 4.5 V to 5.5 V, V = 2.4 V, V = 0.8 V, T = –40°C to 85° ..
TS12A4516DG4 ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85Electrical Characteristics for ±5-V SupplyV = 4.5 V to 5.5 V, V = –4.5 V to –5.5 V, T = –40°C to 85 ..
TS12A4516DR ,Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 8-SOIC -40 to 85FEATURES• ±1-V to ±6-V Dual-Supply Operation • Specified Low ON-Leakage Currents:• Specified ON-Sta ..
TPCA8059-H
Power MOSFET (N-ch single VDSS≤30V)
TPCA8059-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCA8059-HTPCA8059-HTPCA8059-HTPCA8059-H
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 9.1 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
