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TS1085 , 3A Low Dropout Positive Voltage Regulator
TS1085 , 3A Low Dropout Positive Voltage Regulator
TPC8405
Power MOSFET (N-ch + P-ch complementary
TPC8405
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U−MOS IV/N Channel U-MOS III)
TPC8405 Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.) N Channel RDS (ON) = 20 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 12S (typ.) N Channel |Yfs| = 14S (typ.) Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration
