TPC8403 ,Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Motor Drive Notebook PC Portable Machines and ToolsTPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel ..
TPC8405 ,Power MOSFET (N-ch + P-ch complementaryThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
TPC8407 ,Power MOSFET (N-ch + P-ch complementaryThermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TPC8408 ,Power MOSFET (N-ch + P-ch complementaryThermal CharacteristicsCharacteristics Symbol Max UnitChannel-to-ambient thermal resistance (single ..
TPC8A01 ,MOSFET TPC SeriesTHERMAL CHARACTERISTICS -Thermal resistance, Single-device operationchannel to ambient (Note3a)(t=1 ..
TPC8A01 ,MOSFET TPC SeriesTOSHIBA TPC8A01OIITOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ll-IME)02: INCLUDES S ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TS1051 , Constant Voltage and Constant Current Controller For Battery Chargers and Adaptors
TS1084CM-3.3 , 5A Low Dropout Positive Voltage Regulator
TS1084CZ-2.5 , 5A Low Dropout Positive Voltage Regulator
TPC8403
Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Motor Drive Notebook PC Portable Machines and Tools
TPC8403
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
TPC8403 Motor Dreive
Notebook PC
Portable Machines and Tools Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.) Low leakage current: P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement-mode : P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta ��� � 25°C) �30 30
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration 8 7 6 5
1 2 3 4
N-ch P-ch
