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TPC8401TOSHIBA ?N/a3000avaiField Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs


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TPC8401
Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs
TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8401

Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA) Maximum Ratings (Ta = 25°C) −30 30
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.080 g (typ.)
Circuit Configuration

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