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TPC8211TOSN/a30000avaiField Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications


TPC8211 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
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TPC8211
Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8211

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications Low drain−source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Tstg
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.08 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
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