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TPC8134ToshibaN/a30000avaiPower MOSFET (P-ch single)


TPC8134 ,Power MOSFET (P-ch single)
TPC8206 ,TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Single-device operationR 83.3th (ch-a) (1)(N ..
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TPC8209 ,Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PC ApplicationsApplications  Small footprint due to small and thin package  Low drain−source ON resistance: ..
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TPC8134
Power MOSFET (P-ch single)
TPC8134
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8134TPC8134TPC8134TPC8134
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Small footprint due to small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaa a = 25 = 25 = 25 = 25  unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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