TPC8039-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8039-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8040-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8040-H ,Power MOSFET (N-ch single VDSS≤30V)
TPC8041 ,Power MOSFET (N-ch single VDSS≤30V)
TPC8042 ,Power MOSFET (N-ch single VDSS≤30V)
TRSF3238EIDBR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver With ?15-kV ESD (HBM) Protection 28-SSOP -40 to 85SLLS826–AUGUST 2007FUNCTION TABLESabc(1)Each DriverINPUTSOUTPUTDRIVER STATUSTIME ELAPSED SINCE LAST ..
TRSF3238EIDWR ,3-V to 5.5-V Multichannel RS-232 Line Driver/Receiver With ?15-kV ESD (HBM) Protection 28-SOIC -40 to 85FEATURESDB, DW, OR PW PACKAGE• RS-232 Bus-Pin ESD Protection Exceeds(TOP VIEW)±15 kV Using Human-Bo ..
TRSF3243CPWR ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-TSSOP maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
TRSF3243IDB ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-SSOP .FUNCTION TABLES(1)EACH DRIVERINPUTSOUTPUTDRIVER STATUSVALID RINDOUTDIN FORCEON FORCEOFFRS-232 LEVE ..
TRSF3243IPWR ,3-V to 5.5-V Multichannel RS-232 Compatible Line Driver/Receiver 28-TSSOP -40 to 85FEATURESDB, DW, OR PW PACKAGE• Operates With 3-V to 5.5-V V SupplyCC (TOP VIEW)• Always-Active Noni ..
TS1003 , THE ONLY 0.8V TO 5.5V, 0.6uA RAIL-TO-RAIL SINGLE OP AMP
TPC8039-H
Power MOSFET (N-ch single VDSS≤30V)
TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8039-H High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.085 g (typ.)
Circuit Configuration 8 6
1 2 3 5
